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  data sheet high voltage power schottky rectifier mbr3100 aug. 2012 rev. 1.1 bcd semiconductor manufacturing limited 1 general description the mbr3100 is a high voltage schottky rectifier suited for switch mode power supplies and other power converters. this device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. the mbr3100 is available in standard do-214ac and do-27 packages. features ? low forward voltage: 0.70v at 125 c ? high surge capacity ? operating junction temperature: 150 c ? guard ? ring for stress protection ? lead free packages available ? low thermal resistance main product characteristics i f(av) 3a v rrm 100v t j (max) 150 c v f (max) 0.7v mechanical characteristics ? case: epoxy, molded ? epoxy meets ul 94v-0 @ 0.125in ? weight (approximately): 1.9grams ? finish: all extern al surfaces corrosion resistant and terminal ? leads are readily solderable ? lead temperature fo r soldering purpose: 260 c maximum for 10 seconds applications ? power supply ? output rectification ? power management ? instrumentation figure 1. package types of mbr3100 do-214ac do-27
data sheet high voltage power schottky rectifier mbr3100 aug. 2012 rev. 1.1 bcd semiconductor manufacturing limited 2 pin configuration vr package vp package (do-214ac) (do-27) figure 2. pin configuration of mbr3100 (top view) ordering information mbr3100 - circuit type package part number marking id packing type lead free green lead free green do-214ac MBR3100VRTR-E1 mbr3100vrtr-g1 3100ve 3100vr tape & reel do-27 mbr3100vp-e1 mbr3100vp-g1 3100vp 3100vg bulk mbr3100vptr-e1 mbr3100vptr-g1 3100vp 3100vg ammo bcd semiconductor's pb-free products, as designated with "e1" suffix in the part number, are rohs compliant. products with ?g1? suffix are available in green packages. e1: lead free g1: green blank: bulk tr: ammo and tape & reel package vr: do-214ac vp: do-27 cathode line by marking cathode anode cathode line by marking cathode anode
data sheet high voltage power schottky rectifier mbr3100 aug. 2012 rev. 1.1 bcd semiconductor manufacturing limited 3 absolute maximum ratings (note 1) note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. note 2: the heat generated must be less than the thermal conductivity from junction-to-ambient: dp d /dt j < 1/ ja . recommended operating conditions parameter symbol condition value unit thermal resistance jl junction to lead do-214ac 20 c/w do-27 5 ja junction to ambient do-214ac 70 do-27 35 parameter symbol value unit peak repetitive reverse voltage v rrm 100 v working peak reverse voltage v rwm dc blocking voltage v r average rectified forward current (rated v r , t c =141 c) i f(av) 3 a non repetitive peak surge current (surge applied at rated load conditions half wave, single phase, 60hz) i fsm 80 a operating junction temperature range (note 2) t j -65 to 150 c storage temperature range t stg -65 to 150 c voltage rate of change (rated v r ) dv/dt 10000 v/ s esd (machine model=c) 400 v esd (human body model=3b) 8000 v
data sheet high voltage power schottky rectifier mbr3100 aug. 2012 rev. 1.1 bcd semiconductor manufacturing limited 4 electrical characteristics parameter symbol conditions value unit maximum instantaneous forward voltage drop (note 3) v f (max) i f =3a, t c =25 c 0.85 v i f =3a, t c =125 c 0.7 maximum instantaneous reverse current (note 3) i r (max) rated dc voltage, t c =25 c 0.5 ma rated dc voltage, t c =125 c 2.0 note 3: pulse test: pulse width=300 s, duty cycle ? 2.0%.
data sheet high voltage power schottky rectifier mbr3100 aug. 2012 rev. 1.1 bcd semiconductor manufacturing limited 5 typical performance characteristics figure 3. typical forward characteristics figure 4. typical reverse characteristics figure 5. average forward current figure 6. average forward current vs. case temperature vs. ambient temperature 0.00.10.20.30.40.50.60.70.80.91.01.1 0.01 0.1 1 10 100 instantaneous forward current (a) instantaneous forward voltage (v) t j =150 o c t j =125 o c t j =25 o c 0 102030405060708090100 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 instantaneous reverse current ( a) instantaneous reverse voltage (v) t j =25 o c t j =125 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 120 125 130 135 140 145 150 155 case temperature ( o c) average forword current (a) do-27 do-214ac 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 30 40 50 60 70 80 90 100 110 120 130 140 150 ambient temperature ( o c) average forword current (a) do-27 do-214ac
data sheet high voltage power schottky rectifier mbr3100 aug. 2012 rev. 1.1 bcd semiconductor manufacturing limited 6 mechanical dimensions do-214ac unit: mm(inch) 3. 990(0. 157) 4. 600(0. 181) 2.400(0.094) 2.790(0.110) 1.250(0.049) 1.650(0.065) 4. 800(0. 189) 5. 280(0. 208) 0. 760(0. 030) 1. 520(0. 060) 1. 900(0. 075) 2. 290(0. 090) 0. 100(0. 004) 0. 310(0. 012) 0. 152(0. 006) 0. 305(0. 012) cathode line by marking
data sheet high voltage power schottky rectifier mbr3100 aug. 2012 rev. 1.1 bcd semiconductor manufacturing limited 7 mechanical dimensions (continued) do-27 unit: mm(inch) 25.400(1.000) min 25.400(1.000) min 1.300(0.051) 1.200(0.047) 8.500(0.335) 9.500(0.374) 5.000(0.197) 5.600(0.220) dia. dia. cathode line by marking
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yishan road, shanghai 200233, china tel: +021-6485-1491, fa x: +86-021-5450-0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manu facturing co., ltd., shenzhen office unit a room 1203,skyworth bldg., gaoxin ave.1.s., nanshan district shenzhen 518057, china tel: +86-0755-8660-4900, fax: +86-0755-8660-4958 taiwan office (taipei) bcd semiconductor (taiwan) company limited 3f, no.17, lane 171, sec. 2, jiu-zong rd., ne i-hu dist., taipei(114), taiwan, r.o.c tel: +886-2-2656 2808 fax: +886-2-2656-2806/26562950 taiwan office (hsinchu) bcd semiconductor (taiwan) company limited 8f, no.176, sec. 2, gong-dao 5th road, east district hsinchu city 300, taiwan, r.o.c tel: +886-3-5160181, fax: +886-3-5160181 - headquarters bcd (shanghai) micro-electronics limited no. 1600, zi xing road, shanghai zizhu scie nce-based industrial park, 200241, p. r.c. tel: +86-021-2416-2266, fax: +86-021-2416-2277 usa office bcd semiconductor corp. 48460 kato road, fremont, ca 94538, usa tel: +1-510-668-1950 fax: +1-510-668-1990 korea office bcd semiconductor limited korea office. room 101-1112, digital-empire ii, 486 sin-dong, yeongtong-gu, suwon-city, gyeonggi-do, korea tel: +82-31-695-8430 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited


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